MDS500L
Microsemi Corporation
Microsemi Corporation
RF TRANS NPN 70V 1.09GHZ 55ST
$0.00
Available to order
Reference Price (USD)
25+
$530.09960
Exquisite packaging
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Upgrade your RF designs with Microsemi Corporation's MDS500L Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how MDS500L can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 70V
- Frequency - Transition: 1.03GHz ~ 1.09GHz
- Noise Figure (dB Typ @ f): -
- Gain: 9.2dB
- Power - Max: 833W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
- Current - Collector (Ic) (Max): 24A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: 55ST
- Supplier Device Package: 55ST