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MBRT600200R

GeneSiC Semiconductor
MBRT600200R Preview
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 300A 3 TOWER
$140.20
Available to order
Reference Price (USD)
1+
$123.58000
10+
$115.50500
Exquisite packaging
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Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Anode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io) (per Diode): 300A
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 200 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Three Tower
  • Supplier Device Package: Three Tower

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