MBRT600150R
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 150V 300A 3 TOWER
$140.20
Available to order
Reference Price (USD)
25+
$113.08200
Exquisite packaging
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The MBRT600150R by GeneSiC Semiconductor is a top choice in the Discrete Semiconductor Products sector, particularly for Diodes - Rectifiers - Arrays. These diodes are designed to meet the highest standards of performance and reliability, offering features like low forward drop and high reverse voltage. Ideal for power supplies, inverters, and more, the MBRT600150R ensures efficient energy conversion. GeneSiC Semiconductor prides itself on delivering products that exceed expectations. Reach out to us today to discuss your project requirements!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 880 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 150 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
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