MBRB10H35HE3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 35V 10A TO263AB
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Achieve superior power conversion with MBRB10H35HE3/81 Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Obsolete
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35 V
- Current - Average Rectified (Io): 10A
- Voltage - Forward (Vf) (Max) @ If: 850 mV @ 20 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100 µA @ 35 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -65°C ~ 175°C
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