MBR60030CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 30V 300A 2TOWER
$129.36
Available to order
Reference Price (USD)
25+
$96.34800
Exquisite packaging
Discount
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The MBR60030CT by GeneSiC Semiconductor is a reliable and efficient solution in the Discrete Semiconductor Products market, specifically for Diodes - Rectifiers - Arrays. These diodes are designed to deliver consistent performance in various applications, from industrial equipment to consumer electronics. With features like high surge capability and excellent thermal management, the MBR60030CT stands out as a superior choice. GeneSiC Semiconductor is committed to providing top-quality products that meet global standards. Get in touch with us now for detailed specifications and pricing!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 750 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 1 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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