MBR600200CTR
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE SCHOTTKY 200V 300A 2 TOWER
$129.36
Available to order
Reference Price (USD)
25+
$127.94160
Exquisite packaging
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The MBR600200CTR by GeneSiC Semiconductor is a top choice in the Discrete Semiconductor Products sector, particularly for Diodes - Rectifiers - Arrays. These diodes are designed to meet the highest standards of performance and reliability, offering features like low forward drop and high reverse voltage. Ideal for power supplies, inverters, and more, the MBR600200CTR ensures efficient energy conversion. GeneSiC Semiconductor prides itself on delivering products that exceed expectations. Reach out to us today to discuss your project requirements!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 200 V
- Current - Average Rectified (Io) (per Diode): 300A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 300 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3 mA @ 200 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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