Shopping cart

Subtotal: $0.00

MBR400100CT

GeneSiC Semiconductor
MBR400100CT Preview
GeneSiC Semiconductor
DIODE MODULE 100V 200A 2TOWER
$113.25
Available to order
Reference Price (USD)
1+
$87.57000
10+
$82.09700
100+
$76.62360
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io) (per Diode): 200A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 200 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 mA @ 20 V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Twin Tower
  • Supplier Device Package: Twin Tower

Related Products

Global Power Technology-GPT

G3S17020B

Infineon Technologies

DD170N16SHPSA1

Vishay General Semiconductor - Diodes Division

VB10150C-E3/4W

Vishay General Semiconductor - Diodes Division

VS-30CTQ040STRLHM3

Vishay General Semiconductor - Diodes Division

VS-30CPQ100-N3

Vishay General Semiconductor - Diodes Division

VS-8CWH02FN-M3

Diodes Incorporated

BAV23CQ-7-F

Vishay General Semiconductor - Diodes Division

VBT1045C-M3/4W

Vishay General Semiconductor - Diodes Division

VB30200C-E3/8W

Top