MBR20030CT
GeneSiC Semiconductor
GeneSiC Semiconductor
DIODE MODULE 30V 200A 2TOWER
$90.14
Available to order
Reference Price (USD)
25+
$70.90600
Exquisite packaging
Discount
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The MBR20030CT by GeneSiC Semiconductor is a high-performance diode in the Discrete Semiconductor Products category, specifically designed for Diodes - Rectifiers - Arrays applications. Offering robust construction and advanced features, this product is perfect for engineers and designers seeking reliable components. The MBR20030CT excels in efficiency, with minimal power loss and high-speed switching capabilities. Whether for industrial machinery or consumer electronics, GeneSiC Semiconductor delivers unmatched quality. Submit your inquiry today to find out how this product can meet your needs!
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 30 V
- Current - Average Rectified (Io) (per Diode): 200A (DC)
- Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 5 mA @ 20 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
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