JANHCB2N3440
Microchip Technology
Microchip Technology
POWER BJT
$16.20
Available to order
Reference Price (USD)
1+
$16.20000
500+
$16.038
1000+
$15.876
1500+
$15.714
2000+
$15.552
2500+
$15.39
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose JANHCB2N3440 by Microchip Technology for exceptional quality in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for high performance, featuring excellent current handling and stability. Ideal for use in power management and signal amplification, JANHCB2N3440 is a versatile solution. Ready to order? Submit your inquiry today and let Microchip Technology provide the components you need.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 250 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
- Current - Collector Cutoff (Max): 2µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
- Power - Max: 800 mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C
- Mounting Type: Through Hole
- Package / Case: TO-205AD, TO-39-3 Metal Can
- Supplier Device Package: TO-39 (TO-205AD)
Related Products
Microchip Technology
2N2369AUBC
Microchip Technology
JANKCB2N5002
Microchip Technology
2N5612
Renesas Electronics America Inc
2SD991K
Microchip Technology
MNSKC2N2222A
Microchip Technology
2N336T2
onsemi
2SC536F-SPA-AC
Microchip Technology
2N5661
onsemi
NSVMMBT4401WT1G
Rohm Semiconductor