Shopping cart

Subtotal: $0.00

JAN2N6301P

Microchip Technology
JAN2N6301P Preview
Microchip Technology
POWER BJT
$39.93
Available to order
Reference Price (USD)
1+
$39.93000
500+
$39.5307
1000+
$39.1314
1500+
$38.7321
2000+
$38.3328
2500+
$37.9335
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 8 A
  • Voltage - Collector Emitter Breakdown (Max): 80 V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
  • Current - Collector Cutoff (Max): 500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
  • Power - Max: 75 W
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-213AA, TO-66-2
  • Supplier Device Package: TO-66 (TO-213AA)

Related Products

Toshiba Semiconductor and Storage

TTC015B,Q

Nexperia USA Inc.

BC846AQBZ

Microchip Technology

2N6323

Micro Commercial Co

2SC1623-L6-TP

Microchip Technology

JANTXV2N6059

Microchip Technology

JANTX2N5237S

Microchip Technology

JANTXV2N5581

Microchip Technology

JANS2N3506AL

Renesas Electronics America Inc

2SD1780(0)-T-AZ

Harris Corporation

MJH16012

Top