JAN2N3811U
Microsemi Corporation
Microsemi Corporation
TRANS 2PNP 60V 0.05A
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Maximize efficiency with Microsemi Corporation's JAN2N3811U BJT Arrays, engineered for precision and reliability. These arrays boast low power consumption, high current capacity, and excellent thermal characteristics, making them a top choice for power supply and signal processing circuits. Ideal for telecommunications, robotics, and IoT devices. Don't miss out reach out to our sales team for more details and special offers!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
- Current - Collector Cutoff (Max): 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Power - Max: 350mW
- Frequency - Transition: -
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-78-6 Metal Can
- Supplier Device Package: TO-78-6
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