Shopping cart

Subtotal: $0.00

JAN1N5809US

Microchip Technology
JAN1N5809US Preview
Microchip Technology
DIODE GEN PURP 100V 6A B-MELF
$7.98
Available to order
Reference Price (USD)
100+
$9.57100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 60pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: B, SQ-MELF
  • Operating Temperature - Junction: -65°C ~ 175°C

Related Products

Microchip Technology

R53150

Microchip Technology

LSM340GE3/TR13

Microchip Technology

UES1105HR2

KYOCERA AVX

UCQ30A03

Microchip Technology

UT4005

Microchip Technology

JANTX1N5189

Global Power Technology-GPT

G4S06508JT

Vishay General Semiconductor - Diodes Division

VS-MURB820-1HM3

Toshiba Semiconductor and Storage

CRG05(TE85L,Q,M)

Taiwan Semiconductor Corporation

SK810CH

Top