IXTY4N65X2
IXYS
IXYS
MOSFET N-CH 650V 4A TO252
$2.71
Available to order
Reference Price (USD)
1+
$1.86000
70+
$1.50000
140+
$1.35000
560+
$1.05000
1,050+
$0.87000
2,520+
$0.84000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXTY4N65X2, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTY4N65X2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IPB075N04LG
Infineon Technologies
BSS209PWH6327XTSA1
Infineon Technologies
BSP296NH6433XTMA1
IXYS
IXTH96N25T
onsemi
FDMS86300DC
Infineon Technologies
IPA60R360P7SXKSA1
onsemi
NTPF150N65S3HF
Renesas Electronics America Inc
2SK2736-E
Vishay Siliconix
SI7788DP-T1-GE3
Diodes Incorporated