IXTY1R4N120PHV
IXYS
IXYS
MOSFET N-CH 1200V 1.4A TO252
$2.09
Available to order
Reference Price (USD)
70+
$2.25000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXYS presents IXTY1R4N120PHV, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IXTY1R4N120PHV delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SIHP12N60E-GE3
Infineon Technologies
IPB117N20NFDATMA1
IXYS
IXTA44P15T
Rohm Semiconductor
RQ6G050ATTCR
onsemi
FCPF11N60
Infineon Technologies
AUIRF8736M2TR
Infineon Technologies
IPB017N10N5LFATMA1
Renesas Electronics America Inc
2SK3814-AZ
Alpha & Omega Semiconductor Inc.
AOTF4S60
Toshiba Semiconductor and Storage