IXTX22N100L
IXYS
IXYS
MOSFET N-CH 1000V 22A PLUS247-3
$45.21
Available to order
Reference Price (USD)
1+
$33.00000
30+
$28.05000
120+
$26.07000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTX22N100L by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTX22N100L ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 700W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Microchip Technology
APT48M80L
Texas Instruments
CSD17381F4T
Vishay Siliconix
SI3457CDV-T1-E3
Nexperia USA Inc.
PMPB20XNEA,115
Nexperia USA Inc.
BUK7626-100B,118
Infineon Technologies
AUIRFS3107-7P
Nexperia USA Inc.
BUK763R4-30B,118
Microchip Technology
APT10050LVFRG
onsemi
NVTFS4C08NTAG
IXYS