IXTQ460P2
IXYS
IXYS
MOSFET N-CH 500V 24A TO3P
$6.65
Available to order
Reference Price (USD)
1+
$4.59000
30+
$3.69000
120+
$3.36200
510+
$2.72239
1,020+
$2.29600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXTQ460P2 by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXTQ460P2 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2890 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3P
- Package / Case: TO-3P-3, SC-65-3
Related Products
Fairchild Semiconductor
IRFW740BTM
EPC
EPC2024
Vishay Siliconix
SQ4435EY-T1_GE3
STMicroelectronics
STD134N4F7AG
IXYS
IXFT400N075T2
onsemi
NTLUS3A39PZTBG
Infineon Technologies
IPN80R900P7ATMA1
Toshiba Semiconductor and Storage
TPH4R003NL,L1Q
Infineon Technologies
IRFZ44VZPBF
Vishay Siliconix