IXTP180N10T
IXYS
IXYS
MOSFET N-CH 100V 180A TO220AB
$7.22
Available to order
Reference Price (USD)
1+
$4.98000
50+
$4.00500
100+
$3.64900
500+
$2.95480
1,000+
$2.49200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXTP180N10T from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXTP180N10T delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Sanyo
3LN03M-TL-E
STMicroelectronics
STI150N10F7
IXYS
IXFH220N06T3
onsemi
NVTFS5C680NLWFTAG
Vishay Siliconix
SUM90142E-GE3
Vishay Siliconix
SIJH5700E-T1-GE3
Panjit International Inc.
PJD35N06A_L2_00001
Alpha & Omega Semiconductor Inc.
AOB66613L
Diodes Incorporated
DMPH6250SQ-7
onsemi