IXTN110N20L2
IXYS
IXYS
MOSFET N-CH 200V 100A SOT227B
$51.24
Available to order
Reference Price (USD)
10+
$34.59500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTN110N20L2 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTN110N20L2 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 735W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
onsemi
FDP22N50N
IXYS
IXFA102N15T
Renesas Electronics America Inc
NP22N055HLE-S16-AY
STMicroelectronics
STP15NK50ZFP
Infineon Technologies
IRLL024ZTRPBF
Infineon Technologies
IPD350N06LGBTMA1
STMicroelectronics
STF4N52K3
Vishay Siliconix
SQ2301ES-T1_BE3
Vishay Siliconix
IRFR210TRLPBF-BE3
Diodes Incorporated