IXTH1N170DHV
IXYS
IXYS
MOSFET N-CH 1700V 1A TO247HV
$16.33
Available to order
Reference Price (USD)
30+
$9.39800
Exquisite packaging
Discount
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Experience the power of IXTH1N170DHV, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXTH1N170DHV is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 290W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
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