IXTH12N100
IXYS
IXYS
MOSFET N-CH 1000V 12A TO247
$0.00
Available to order
Reference Price (USD)
30+
$12.50600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXTH12N100, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXTH12N100 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Infineon Technologies
IPU60R950C6BKMA1
Alpha & Omega Semiconductor Inc.
AOWF240
NXP USA Inc.
NOCATSTYPE
Infineon Technologies
IRFR4104TR
Diodes Incorporated
DMP57D5UFB-7
Infineon Technologies
IRLBA3803P
Infineon Technologies
BSL372SNH6327XTSA1
Vishay Siliconix
IRF840ASTRR
Rohm Semiconductor
RDX080N50FU6
Infineon Technologies