IXTH06N220P3HV
IXYS
IXYS
MOSFET N-CH 2200V 600MA TO247HV
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Reference Price (USD)
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$15.54000
Exquisite packaging
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Upgrade your electronic designs with IXTH06N220P3HV by IXYS, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, IXTH06N220P3HV ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 2200 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
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