IXTH02N450HV
IXYS
IXYS
MOSFET N-CH 4500V 200MA TO247HV
$26.00
Available to order
Reference Price (USD)
1+
$19.36000
30+
$16.28000
120+
$14.96000
510+
$12.76000
Exquisite packaging
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Discover IXTH02N450HV, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 4500 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 625Ohm @ 10mA, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 246 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 113W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247HV
- Package / Case: TO-247-3 Variant
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