IXTA3N100D2-TRL
IXYS
IXYS
MOSFET N-CH 1000V 3A TO263
$3.63
Available to order
Reference Price (USD)
1+
$3.63356
500+
$3.5972244
1000+
$3.5608888
1500+
$3.5245532
2000+
$3.4882176
2500+
$3.451882
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IXTA3N100D2-TRL, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXTA3N100D2-TRL for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 0V
- Rds On (Max) @ Id, Vgs: 6Ohm @ 1.5A, 0V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (D2Pak)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Harris Corporation
IRFR321
Rectron USA
RM120N60T2
Nexperia USA Inc.
PMZ1200UPEYL
IXYS
IXTL2N470
Vishay Siliconix
SIE808DF-T1-GE3
STMicroelectronics
STL11N3LLH6
Alpha & Omega Semiconductor Inc.
AOW14N50
Torex Semiconductor Ltd
XP161A11A1PR-G
Vishay Siliconix
IRFBF20STRLPBF
onsemi