IXSK35N120BD1
IXYS

IXYS
IGBT 1200V 70A 300W TO264
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Choose IXSK35N120BD1 Single IGBTs by IXYS for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. IXYS's reputation for quality makes IXSK35N120BD1 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Obsolete
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 70 A
- Current - Collector Pulsed (Icm): 140 A
- Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A
- Power - Max: 300 W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 960V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264AA(IXSK)