IXKP35N60C5
IXYS
IXYS
MOSFET N-CH 600V 35A TO220AB
$0.00
Available to order
Reference Price (USD)
50+
$7.42100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXKP35N60C5 by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXKP35N60C5 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
onsemi
NTTFS4C25NTWG
onsemi
FDI3632
Microsemi Corporation
APT130SM70B
Infineon Technologies
IRFR3806PBF
Infineon Technologies
SPP15N65C3HKSA1
Infineon Technologies
SPB03N60S5ATMA1
Infineon Technologies
IRF7700
Microsemi Corporation
APT20F50B
onsemi
NSTR4501NT1G
onsemi