IXKH47N60C
IXYS
IXYS
MOSFET N-CH 600V 47A TO247AD
$24.93
Available to order
Reference Price (USD)
1+
$16.92000
30+
$14.22667
120+
$13.07300
510+
$11.15051
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXKH47N60C by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXKH47N60C inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2mA
- Gate Charge (Qg) (Max) @ Vgs: 650 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: Super Junction
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD
- Package / Case: TO-247-3
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