IXGM25N100A
IXYS
IXYS
POWER MOSFET TO-3
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Discover high-performance IXGM25N100A Single IGBTs from IXYS, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, IXGM25N100A ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
- Power - Max: 200 W
- Switching Energy: 5mJ (off)
- Input Type: Standard
- Gate Charge: 180 nC
- Td (on/off) @ 25°C: 100ns/500ns
- Test Condition: 800V, 25A, 33Ohm, 15V
- Reverse Recovery Time (trr): 200 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AE
- Supplier Device Package: TO-204AE
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