IXGK120N120B3
IXYS
IXYS
IGBT 1200V 200A 830W TO264
$29.81
Available to order
Reference Price (USD)
25+
$22.18760
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXGK120N120B3 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 200 A
- Current - Collector Pulsed (Icm): 370 A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
- Power - Max: 830 W
- Switching Energy: 5.5mJ (on), 5.8mJ (off)
- Input Type: Standard
- Gate Charge: 470 nC
- Td (on/off) @ 25°C: 36ns/275ns
- Test Condition: 600V, 100A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
Related Products
IXYS
IXYX140N120A4
Infineon Technologies
IRGSL15B60KDPBF-INF
Infineon Technologies
IKW20N65ET7XKSA1
Infineon Technologies
IKW40N65H5FKSA1
IXYS
IXGX100N170
Infineon Technologies
SKA06N60XKSA1
onsemi
FGA30S120P
Rohm Semiconductor
RGTH00TK65DGC11
Renesas Electronics America Inc
RJH60F0DPK-00#T0
onsemi