IXFY36N20X3
IXYS
IXYS
MOSFET N-CH 200V 36A TO252AA
$4.58
Available to order
Reference Price (USD)
1+
$3.16000
70+
$2.54257
140+
$2.31650
560+
$1.87580
1,050+
$1.58200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of IXFY36N20X3, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFY36N20X3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 45mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1425 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
SI7114ADN-T1-GE3
Renesas Electronics America Inc
TBB1002BMTL-H
Nexperia USA Inc.
BUK9Y6R0-60E,115
Nexperia USA Inc.
PMPB25ENEX
Nexperia USA Inc.
BUK7Y8R7-60EX
Diodes Incorporated
BSS123Q-7
NXP USA Inc.
BUK7E07-55B,127
EPC
EPC2066
Alpha & Omega Semiconductor Inc.
AO3424
Diodes Incorporated