IXFX230N20T
IXYS
IXYS
MOSFET N-CH 200V 230A PLUS247-3
$25.49
Available to order
Reference Price (USD)
1+
$18.99000
30+
$15.96567
120+
$14.67100
510+
$12.51351
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover IXFX230N20T, a versatile Transistors - FETs, MOSFETs - Single solution from IXYS, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 7.5mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 378 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1670W (Tc)
- Operating Temperature: -
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247™-3
- Package / Case: TO-247-3 Variant
Related Products
Toshiba Semiconductor and Storage
TK1K0A60F,S4X
Vishay Siliconix
SIHA15N60E-GE3
Infineon Technologies
IPL60R125P7AUMA1
Vishay Siliconix
SI7852DP-T1-E3
Vishay Siliconix
SIS488DN-T1-GE3
Fairchild Semiconductor
HUFA75337S3ST
onsemi
MCH3477-TL-W
Vishay Siliconix
SIDR668ADP-T1-RE3
onsemi
NVD14N03RT4G
onsemi