IXFV15N100P
IXYS
IXYS
MOSFET N-CH 1000V 15A PLUS220
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXFV15N100P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXFV15N100P inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 543W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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