IXFT140N10P-TRL
IXYS
IXYS
MOSFET N-CH 100V 140A TO268
$7.86
Available to order
Reference Price (USD)
1+
$7.85830
500+
$7.779717
1000+
$7.701134
1500+
$7.622551
2000+
$7.543968
2500+
$7.465385
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IXFT140N10P-TRL, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXFT140N10P-TRL for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Related Products
Renesas Electronics America Inc
2SK3367-Z-E2-AZ
Nexperia USA Inc.
BUK9J0R9-40HX
onsemi
FDMS2D5N08C
Renesas Electronics America Inc
2SJ462-T1-AZ
Goford Semiconductor
G30N03D3
Harris Corporation
IRF9532
IXYS
IXFP4N100PM
onsemi
FDMA037N08LC
onsemi
NTMFS6H824NT1G
Goford Semiconductor