IXFR32N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 23A ISOPLUS247
$43.84
Available to order
Reference Price (USD)
1+
$32.00000
30+
$27.20000
120+
$25.28000
Exquisite packaging
Discount
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Experience the power of IXFR32N100Q3, a premium Transistors - FETs, MOSFETs - Single from IXYS. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, IXFR32N100Q3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 570W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
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