IXFR15N100Q3
IXYS
IXYS
MOSFET N-CH 1000V 10A ISOPLUS247
$22.63
Available to order
Reference Price (USD)
1+
$15.49000
30+
$13.02400
120+
$11.96800
510+
$10.20800
Exquisite packaging
Discount
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Optimize your electronic systems with IXFR15N100Q3, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXFR15N100Q3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3250 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 400W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247™
- Package / Case: TO-247-3
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