IXFN48N60P
IXYS
IXYS
MOSFET N-CH 600V 40A SOT227B
$28.81
Available to order
Reference Price (USD)
1+
$20.24000
10+
$18.72200
30+
$17.20400
100+
$15.98960
250+
$14.67400
500+
$13.96560
Exquisite packaging
Discount
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Boost your electronic applications with IXFN48N60P, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFN48N60P meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 140mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 5.5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 8860 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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