IXFN20N120P
IXYS
IXYS
MOSFET N-CH 1200V 20A SOT-227B
$45.57
Available to order
Reference Price (USD)
10+
$34.22500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
IXFN20N120P by IXYS is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, IXFN20N120P ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 6.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Fairchild Semiconductor
FDZ372NZ
onsemi
NVHL082N65S3F
STMicroelectronics
STD3N40K3
Alpha & Omega Semiconductor Inc.
AOD4N60
Microchip Technology
APT10026L2LLG
NXP USA Inc.
BUK9511-55A,127
Vishay Siliconix
SUD50P04-08-BE3
Diodes Incorporated
DMN62D1LFD-7
Infineon Technologies
IRFHS8242TRPBF
onsemi