IXFN170N10
IXYS
IXYS
MOSFET N-CH 100V 170A SOT-227B
$35.76
Available to order
Reference Price (USD)
10+
$34.94600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with IXFN170N10, a premium Transistors - FETs, MOSFETs - Single from IXYS. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IXFN170N10 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 515 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 600W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
Related Products
Renesas Electronics America Inc
HAT2050T-EL-E
Diodes Incorporated
DMG2302UQ-13
onsemi
NVTFS6H880NWFTAG
Rohm Semiconductor
RQ3E120BNTB
Fairchild Semiconductor
FQD3N50CTF
Renesas Electronics America Inc
2SK2372(2)-A
STMicroelectronics
STB60NF06LT4
STMicroelectronics
STB35N65DM2
Rohm Semiconductor
RQ5A025ZPTL
Infineon Technologies