IXFL82N60P
IXYS
IXYS
MOSFET N-CH 600V 55A ISOPLUS264
$33.56
Available to order
Reference Price (USD)
25+
$19.31200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXFL82N60P, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFL82N60P meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 41A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
onsemi
NVHL095N65S3F
Diodes Incorporated
DMTH4002SCTBQ-13
onsemi
NVMYS008N08LHTWG
Renesas Electronics America Inc
2SK3480-S12-AZ
Renesas
2SK2461-AZ
Rohm Semiconductor
RSS070P05HZGTB
Renesas Electronics America Inc
UPA2200T1M-T2-AT
Harris Corporation
IRFU421
Renesas Electronics America Inc
2SJ471-E
Diodes Incorporated