IXFH26N50
IXYS
IXYS
MOSFET N-CH 500V 26A TO247AD
$0.00
Available to order
Reference Price (USD)
1+
$9.98000
30+
$8.17967
120+
$7.38150
510+
$6.18451
1,020+
$5.58600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with IXFH26N50, a high-quality Transistors - FETs, MOSFETs - Single from IXYS. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, IXFH26N50 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
IXYS
IXTC230N085T
Infineon Technologies
IPP037N06L3G
onsemi
NVMFS5C442NLWFT3G
NXP USA Inc.
PHB176NQ04T,118
Diodes Incorporated
ZVN2106ASTOB
Infineon Technologies
AUIRF7739L2
onsemi
FQB4P25TM
Rohm Semiconductor
R6030KNZC8
Vishay Siliconix
SI3483DV-T1-GE3
Alpha & Omega Semiconductor Inc.