IXFH21N50
IXYS
IXYS
MOSFET N-CH 500V 21A TO247AD
$0.00
Available to order
Reference Price (USD)
1+
$8.78000
30+
$7.19567
120+
$6.49350
510+
$5.44051
1,020+
$4.91400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXFH21N50 from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFH21N50 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 250mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
Related Products
Alpha & Omega Semiconductor Inc.
AOT1100L
Infineon Technologies
IPD50R950CEATMA1
onsemi
FQD1N80TF
Infineon Technologies
IRFS7734PBF
Infineon Technologies
IRF7604TRPBF
Vishay Siliconix
SIR172DP-T1-GE3
NXP USA Inc.
NX7002BKMB315
onsemi
NTD20N06LT4
Microsemi Corporation
APT11F80S
onsemi