IXFC20N80P
IXYS
IXYS
MOSFET N-CH 800V 11A ISOPLUS220
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with IXFC20N80P, a reliable Transistors - FETs, MOSFETs - Single by IXYS. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, IXFC20N80P meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 166W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS220™
- Package / Case: ISOPLUS220™
Related Products
Infineon Technologies
IPB65R099C6ATMA1
onsemi
FQPF65N06
Nexperia USA Inc.
PSMN3R2-30YLC,115
Microsemi Corporation
APT50N60JCU2
Infineon Technologies
IPSH6N03LB G
Infineon Technologies
SPI80N08S2-07
Diodes Incorporated
2N7002-13-F-79
IXYS
IXFK55N50
Infineon Technologies
IRF6810STRPBF
Alpha & Omega Semiconductor Inc.