IXFB300N10P
IXYS
IXYS
MOSFET N-CH 100V 300A PLUS264
$34.95
Available to order
Reference Price (USD)
25+
$20.11120
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance IXFB300N10P from IXYS, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IXFB300N10P delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1500W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264™
- Package / Case: TO-264-3, TO-264AA
Related Products
Infineon Technologies
IPB90R340C3ATMA2
Infineon Technologies
IPN80R2K0P7ATMA1
Alpha & Omega Semiconductor Inc.
AOB190A60L
IXYS
IXFN200N10P
Vishay Siliconix
SI7315DN-T1-GE3
EPC
EPC2059
Toshiba Semiconductor and Storage
TW027N65C,S1F
Infineon Technologies
IRF4104PBF
Rohm Semiconductor
RQ3E100MNTB1
STMicroelectronics