IXDR30N120D1
IXYS
IXYS
IGBT 1200V 50A 200W ISOPLUS247
$11.76
Available to order
Reference Price (USD)
30+
$10.00400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXDR30N120D1 Single IGBT from IXYS redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. IXYS stands behind every IXDR30N120D1 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 60 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 30A
- Power - Max: 200 W
- Switching Energy: 4.6mJ (on), 3.4mJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: -
- Test Condition: 600V, 30A, 47Ohm, 15V
- Reverse Recovery Time (trr): 40 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: ISOPLUS247™
Related Products
Fairchild Semiconductor
FGPF7N60LSDTU
Infineon Technologies
AUIRGSL30B60K
Infineon Technologies
IKP28N65ES5XKSA1
IXYS
IXGR72N60B3H1
Rohm Semiconductor
RGTV00TK65DGC11
onsemi
MGP4N60ED
IXYS
IXYX110N120C4
Microchip Technology
APT68GA60B
Fairchild Semiconductor
FGL40N120ANTU
Infineon Technologies