ISZ0703NLSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 13A/56A TSDSON
$1.27
Available to order
Reference Price (USD)
1+
$1.27000
500+
$1.2573
1000+
$1.2446
1500+
$1.2319
2000+
$1.2192
2500+
$1.2065
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover ISZ0703NLSATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 15µA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-25
- Package / Case: 8-PowerTDFN
Related Products
Renesas
HAT1044M-EL-E
Fairchild Semiconductor
FDMS8660AS
Micro Commercial Co
MCP200N06Y-BP
Nexperia USA Inc.
PSMN6R9-100YSFQ
Vishay Siliconix
SIRA18DP-T1-RE3
Toshiba Semiconductor and Storage
TPCC8105,L1Q
Vishay Siliconix
SIHG15N80AEF-GE3
Renesas Electronics America Inc
RJK03J4DPA-00#J5A
onsemi
BXL4004-1E
Vishay Siliconix