IST015N06NM5AUMA1
Infineon Technologies
Infineon Technologies
OPTIMOS 5 POWER MOSFET 60 V
$6.92
Available to order
Reference Price (USD)
1+
$6.92000
500+
$6.8508
1000+
$6.7816
1500+
$6.7124
2000+
$6.6432
2500+
$6.574
Exquisite packaging
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Enhance your circuit performance with IST015N06NM5AUMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IST015N06NM5AUMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 242A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 1.5mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-5-1
- Package / Case: 5-PowerSFN
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