ISP98DP10LMXTSA1
Infineon Technologies
Infineon Technologies
SMALL SIGNAL MOSFETS PG-SOT223-4
$0.82
Available to order
Reference Price (USD)
1+
$0.82000
500+
$0.8118
1000+
$0.8036
1500+
$0.7954
2000+
$0.7872
2500+
$0.779
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with ISP98DP10LMXTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, ISP98DP10LMXTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 930mA (Ta), 1.55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 980mOhm @ 900mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 165µA
- Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223-4
- Package / Case: TO-261-4, TO-261AA
Related Products
Infineon Technologies
BSC042N03LSGATMA1
onsemi
NVMFS5C430NWFAFT3G
STMicroelectronics
STW56N60DM2
Microchip Technology
APT38F50J
Vishay Siliconix
SIR870DP-T1-GE3
Rectron USA
RM7N40S4
onsemi
NTD40N03RT4
onsemi
STD1028T4
onsemi
NTD4813NT4G
Texas Instruments