ISC030N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$3.91
Available to order
Reference Price (USD)
1+
$3.91000
500+
$3.8709
1000+
$3.8318
1500+
$3.7927
2000+
$3.7536
2500+
$3.7145
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with ISC030N10NM6ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, ISC030N10NM6ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 179A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 109µA
- Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 208W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
Related Products
NXP USA Inc.
BUK6507-75C,127
Vishay Siliconix
SIHG22N60E-E3
Diodes Incorporated
DMN61D9UT-13
Nexperia USA Inc.
PMPB17EPX
onsemi
NVTFS6H850NLWFTAG
Infineon Technologies
IPP230N06L3G
Alpha & Omega Semiconductor Inc.
AOD417
onsemi
FDS6680A
Vishay Siliconix
SIHFR430ATRL-GE3
Nexperia USA Inc.