ISC027N10NM6ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-TDSON-8
$4.66
Available to order
Reference Price (USD)
1+
$4.66000
500+
$4.6134
1000+
$4.5668
1500+
$4.5202
2000+
$4.4736
2500+
$4.427
Exquisite packaging
Discount
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ISC027N10NM6ATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, ISC027N10NM6ATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 116µA
- Gate Charge (Qg) (Max) @ Vgs: 72.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 217W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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