ISC017N04NM5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 193A TDSON-8
$2.06
Available to order
Reference Price (USD)
1+
$2.06000
500+
$2.0394
1000+
$2.0188
1500+
$1.9982
2000+
$1.9776
2500+
$1.957
Exquisite packaging
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Upgrade your electronic designs with ISC017N04NM5ATMA1 by Infineon Technologies, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, ISC017N04NM5ATMA1 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 193A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8 FL
- Package / Case: 8-PowerTDFN
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