IS43DR86400E-3DBLI
ISSI, Integrated Silicon Solution Inc
ISSI, Integrated Silicon Solution Inc
IC DRAM 512MBIT PARALLEL 60TWBGA
$7.45
Available to order
Reference Price (USD)
1+
$7.48000
10+
$6.85100
25+
$6.72680
50+
$6.68300
242+
$6.03083
484+
$6.00901
726+
$5.65558
1,210+
$5.42969
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic designs with ISSI, Integrated Silicon Solution Inc IS43DR86400E-3DBLI Memory ICs, known for their superior performance and versatility. Suitable for medical equipment, aerospace, and industrial automation, these ICs feature high endurance, secure data storage, and rapid read/write capabilities. ISSI, Integrated Silicon Solution Inc IS43DR86400E-3DBLI stands for innovation and quality. Request a sample or quote now and take the first step toward optimizing your memory solutions!
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - DDR2
- Memory Size: 512Mb (64M x 8)
- Memory Interface: Parallel
- Clock Frequency: 333 MHz
- Write Cycle Time - Word, Page: 15ns
- Access Time: 450 ps
- Voltage - Supply: 1.7V ~ 1.9V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 60-TFBGA
- Supplier Device Package: 60-TWBGA (8x10.5)
Related Products
ISSI, Integrated Silicon Solution Inc
IS46R16320E-5BLA1
Infineon Technologies
S29GL512S11TFV010
Microchip Technology
24LC1026T-E/SN
STMicroelectronics
M95320-DWDW4TP/K
Infineon Technologies
S25FL256LDPBHI023
ISSI, Integrated Silicon Solution Inc
IS64WV10248EDBLL-10CTLA3
Winbond Electronics
W25Q01NWZEIM TR
Infineon Technologies
FM25L16B-GTR
Infineon Technologies
CY7C1420KV18-250BZC
Renesas Electronics America Inc